Measurement-based large-signal diode model, automated data acquisition system, and verification with on-wafer power and harmonic measurements

A novel relaxation-time large-signal table-based diode model for circuit simulation is presented. A fully automated system which characterizes the device and generates the tabular data file used by the model is also presented. Excellent agreement between the simulated and measured fundamental and second through fourth harmonic power levels is demonstrated for a MODFET diode up to frequencies of 48 GHz. The results presented show that this diode model and its associated automated data acquisition and model generator systems yield accurate simulations of diode devices from diverse technologies over a wide variety of biases, frequencies, and input signal amplitudes. This makes the measurement-based modeling system a valid CAD (computer-aided design) tool for automated diode characterization and for large- and small-signal analysis and design of circuits and systems where such devices are key components.<>