Title :
A comparison of noise performance between a PIN diode and MMIC HEMT and HBT optical receivers
Author :
Ogawa, Hiroyo ; Banba, S. ; Suematsu, E. ; Kamitsuna, H. ; Polifko, D.
Author_Institution :
ATR Optical & Radio Commun. Res. Labs., Kyoto, Japan
Abstract :
The noise performance of MMIC (monolithic microwave integrated circuit) HEMTs (high electron mobility transistors) and HBTs (heterojunction bipolar transistors) are experimentally compared with those of conventional PIN photodiodes. The HEMTs and HBTs are fabricated using a conventional MMIC process. These devices are characterized using a modified electrooptic on-wafer probe station, and a LiNbO/sub 3/ optical external modulator. The attained signal-to-noise ratios of HEMT, HBT, and PIN detectors at a signal frequency of 1 GHz, an optical carrier of 0.83 mu m, and a frequency bandwidth of 1 MHz are 52.3 dB, 55.9 dB, and 54.1 dB, respectively.<>
Keywords :
MMIC; frequency response; heterojunction bipolar transistors; high electron mobility transistors; integrated circuit testing; optical receivers; p-i-n photodiodes; photodetectors; semiconductor device noise; semiconductor device testing; 0.83 micron; 1 GHz; 1 MHz; 52.3 to 55.9 dB; HBT; HEMT; LiNbO/sub 3/; MMIC; PIN diode; SNR; electrooptic on-wafer probe station; heterojunction bipolar transistors; high electron mobility transistors; monolithic microwave integrated circuit; noise performance; optical external modulator; optical receivers; photodiodes; signal-to-noise ratios; Bipolar integrated circuits; Frequency; HEMTs; Heterojunction bipolar transistors; Integrated circuit noise; MMICs; Microwave devices; Optical modulation; Optical noise; Optical receivers;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276837
