A large signal equivalent circuit model for multielectrode laser and microwave semiconductor lasers for CAD applications

An equivalent circuit large-signal model of semiconductor lasers for microwave applications is presented. The model is implemented on SPICE software and is based on a modified set of single-mode rate equations. The carrier density in the active region is related to the potential at the terminals of the active region by a polynomial approximation of the Fermi integral. Different recombination mechanisms (Schockley-Hall-Read, spontaneous, and Auger) are represented by separate terms and not as a global constant lifetime. The model also accounts for saturable absorption occurring in the case of multielectrode lasers. Different applications are presented. A study of the behavior of a multielectrode laser with saturable absorber under static, transient, and small signal conditions is performed. The study shows the bistability of this type of laser and predicts and extremely wide band up to the millimeter-wave range. Another application of the model is the matching of the impedance of the laser to the 50 Omega of the microwave source using a passive reactive circuit.<>