CPW resonator modelling on GaAs using the mixed potential integral equation

The modeling of a lambda /2 coplanar resonator on grounded GaAs substrate is reported. The input impedance of the planar structure is simulated by an integral equation technique in the space domain, namely, the mixed potential integral equation approach. Results indicate very good matching and confirm the feasibility of the numerical techniques. The use of an equally spaced discretization grid makes it possible not only to save the maximum amount of computational storage for the numerical simulation but also to implement highly vectorized algorithms. The method is promising for applications involving planar microwave circuits. The most sensitive parameter of the circuit, the capacitive gap spacing, is modeled by a coupling capacitance. Measured and calculated results show excellent agreement.<>