Title :
Thin Film c-Si Solar Cell Enhanced with Impact Ionization
Author :
Kumar, Vipin ; Nayfeh, Ammar
Author_Institution :
Masdar Inst. of Sci. & Technol., Abu Dhabi, United Arab Emirates
Abstract :
The effect of Impact Ionization (II) on thin film c-Si solar cells is modeled and investigated by TCAD simulation. The doping concentration of absorber layer is varied to see the effect of Impact Ionization (II) on c-Si solar cell by increasing the electric field. The results show that, II can increase the short circuit current (Jsc). Namely we show a 2mA/cm2 increase in Jsc by increasing the doping of the c-Si layer from 1×1018 cm-3 to 1×1019 cm-3. In addition the Internal Quantum Efficiency (IQE) increases from 98% to 116% with impact ionization.
Keywords :
crystallisation; elemental semiconductors; impact ionisation; power engineering computing; semiconductor doping; short-circuit currents; silicon compounds; solar cells; technology CAD (electronics); thin film devices; IQE; TCAD simulation; absorber layer; doping concentration; electric field; impact ionization effect; internal quantum efficiency; short circuit current; thin film crystalline silicon solar cell enhancement; Doping; Electric fields; Impact ionization; Photovoltaic cells; Semiconductor process modeling; Silicon; Impact Ionization; Internal Quantum Efficiency; Short circuit current density; solar cells; thin film;
Conference_Titel :
Modelling Symposium (EMS), 2013 European
Conference_Location :
Manchester
Print_ISBN :
978-1-4799-2577-3
DOI :
10.1109/EMS.2013.114
