DocumentCode
1677362
Title
Picosecond carrier lifetime measurements on a single GaAs nanowire
Author
Parkinson, P. ; Wang, H. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2012
Firstpage
1
Lastpage
2
Abstract
The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic applications. Here, we present a technique to determine the lifetime with picosecond resolution, revealing a 7.5 ps lifetime for GaAs nanowires.
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; high-speed optical techniques; photocapacitance; photoconductivity; GaAs; optoelectronic applications; photocarrier lifetime; photocurrent; picosecond carrier lifetime measurements; picosecond resolution; semiconductor single nanowire; time 7.5 ps; Charge carrier lifetime; Delay; Gallium arsenide; Photoconductivity; Photoluminescence; Semiconductor device measurement; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326553
Link To Document