Quarter-micron WSi/Au gate AlGaAs/InGaAs HJFETs for Q-band power applications

Author

Matsumura, T. ; Kanamori, M. ; Oikawa, Y. ; Shinozaki, S.

Author_Institution

NEC Corp., Shiga, Japan

fYear

1993

Firstpage

1481

Abstract

Quarter-micron T-shaped (WSi/plated-Au) gate AlGaAs/InGaAs HJFETs (heterojunction field effect transistors) for Q-band power applications are reported. An F/sub max/ of 170 GHz was achieved for the 100- mu m-gate-width device. F/sub max/ values of 115 and 90 GHz were realized for 400- and 800- mu m-gate-width devices, respectively, with 100- mu m unit gate finger width, by using Au plating for the gate metal formation to reduce the gate parasitic capacitance. An output power of 25 dBm was obtained with a linear gain of 6.6 dB at 40-GHz band.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gold; indium compounds; junction gate field effect transistors; metallisation; semiconductor-metal boundaries; solid-state microwave devices; tungsten compounds; 0.25 micron; 40 to 170 GHz; 6.6 dB; AlGaAs-InGaAs; EHF; HJFETs; MM-wave device; Q-band power applications; T-shaped gate; WSi-Au gate; gate metal formation; gate parasitic capacitance; heterojunction field effect transistors; FETs; Fingers; Gain; Gold; Indium gallium arsenide; Millimeter wave technology; Parasitic capacitance; Power generation; Silicon compounds; Sputter etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276860

Filename

276860