Title :
X-band GaInP/GaAs power heterojunction bipolar transistor
Author :
Liu, W. ; Khatibzadeh, A. ; Henderson, T. ; Fan, S.-K. ; Davito, D.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The large-signal performance of GaInP/GaAs HBTs (heterojunction bipolar transistors) at X-band is reported on. A CW (continuous wave) output power of 1.0 W is obtained from a GaInP/GaAs HBT consisting of ten 2- mu m*30- mu m emitter fingers, corresponding to a powder density of 33.3 W/mm. The associated power gain is 5 dB and the power-added efficiency is 40%. In addition, a record-high f/sub T/ of 50 GHz and f/sub max/ of 116 GHz are measured for a two-finger HBT. These results compare favorably with those measured for AlGaAs/GaAs HBTs, demonstrating that GaInP/GaAs HBTs are suitable for microwave power applications.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 1 W; 116 GHz; 40 percent; 5 dB; 50 GHz; CW output power; GaInP-GaAs; X-band; heterojunction bipolar transistor; large-signal performance; microwave power applications; two-finger HBT; Current density; Cutoff frequency; Fingers; Gain measurement; Gallium arsenide; Gold; Heterojunction bipolar transistors; Microwave measurements; Power measurement; Wet etching;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276861
