Predictive Modeling of the NBTI Effect for Reliable Design

Author

Bhardwaj, Sarvesh ; Wang, Wenping ; Vattikonda, Rakesh ; Cao, Yu ; Vrudhula, Sarma

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ

fYear

2006

Firstpage

189

Lastpage

192

Abstract

This paper presents a predictive model for the negative bias temperature instability (NBTI) of PMOS under both short term and long term operation. Based on the reaction-diffusion (R-D) mechanism, this model accurately captures the dependence of NBTI on the oxide thickness (t_ox), the diffusing species (H or H₂) and other key transistor and design parameters. In addition, a closed form expression was derived for the threshold voltage change (DeltaV_th) under multiple cycle dynamic operation. Model accuracy and efficiency were verified with 90-nm experimental and simulation data. The impact of NBTI was further investigated on representative digital circuits

Keywords

MOSFET; circuit stability; semiconductor device models; semiconductor device reliability; thermal stability; 90 nm; NBTI effect; PMOS; closed form expression; design parameter; diffusing species; multiple cycle dynamic operation; negative bias temperature instability; oxide thickness; predictive modeling; reaction-diffusion mechanism; threshold voltage change; Circuit simulation; Degradation; Hydrogen; MOSFETs; Negative bias temperature instability; Niobium compounds; Predictive models; Stress; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2006. CICC '06. IEEE

Conference_Location

San Jose, CA

Print_ISBN

1-4244-0075-9

Electronic_ISBN

1-4244-0076-7

Type

conf

DOI

10.1109/CICC.2006.320885

Filename

4114936