DocumentCode :
1677711
Title :
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells
Author :
Chernikov, A. ; Bornwasser, V. ; Koch, M. ; Köster, N. ; Woscholski, R. ; Chatterjee, S. ; Gatti, E. ; Grilli, E. ; Guzzi, M. ; Chrastina, D. ; Isella, G.
Author_Institution :
Fac. of Phys. & Mater. Sci. Center, Philipps-Univ. Marburg, Marburg, Germany
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
A systematic study of carrier relaxation in Ge quantum wells is performed applying photoluminescence and pump-probe spectroscopy. Intersubband-relaxation on a 100 fs time-scale and the presence of a non-thermal carrier distribution are identified.
Keywords :
Ge-Si alloys; carrier relaxation time; elemental semiconductors; germanium; high-speed optical techniques; photoluminescence; semiconductor quantum wells; Ge-SiGe; Ge-SiGe quantum wells; carrier relaxation; nonthermal carrier distribution; photoluminescence; pump probe spectroscopy; time 100 fs; ultrafast intersubband relaxation; Absorption; Nonlinear optics; Optical pumping; Satellites; Silicon germanium; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326564
Link To Document :
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