Title :
A 20 GS/sec Analog-to-Digital Sigma-Delta Modulator in SiGe HBT Technology
Author :
Xiangtao Li ; Kuo, W.-M.L. ; Yuan Lu ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
This paper presents a monolithic continuous-time 2nd-order analog-to-digital sigma-delta modulator implemented in third-generation, 200 GHz SiGe HBT technology. The modulator can operate at a sampling rate of 20 GS/sec with SNRs of 30.5 dB over a signal band from DC to 312.5 MHz, and 51 dB over 1 MHz bandwidth. Operating off a +3.5 V power supply, the modulator dissipates a total of 490 mW. The die occupies an area of 1.58 times 1.7 mm2
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave transistors; sigma-delta modulation; 1 MHz; 200 GHz; 3.5 V; 312.5 MHz; 3G HBT technology; 490 mW; SiGe; analog-to-digital sigma-delta modulator; power supply; Bandwidth; CMOS technology; Delta-sigma modulation; Energy consumption; Filters; Germanium silicon alloys; Heterojunction bipolar transistors; Sampling methods; Signal resolution; Silicon germanium;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320909
