Title :
Designs of GaN-based terahertz quantum cascade lasers for higher temperature operations
Author :
Yasuda, Hiroaki ; Hosako, Iwao ; Hirakawa, Kazuhiko
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
Abstract :
The GaN-based terahertz quantum cascade laser (THz-QCL) structures reported so far do not have gains sufficient for lasing due to broadenings of subband levels caused by the very strong LO phonon-electron interaction. We propose a novel GaN-based two-well THz-QCL structure unaffected by the subband level broadenings and confirm that it has an adequate gain even at 300 K by using the non-equilibrium Green´s function method.
Keywords :
Green´s function methods; III-V semiconductors; electron-phonon interactions; gallium compounds; quantum cascade lasers; submillimetre wave lasers; wide band gap semiconductors; GaN; LO phonon-electron interaction; nonequilibrium Green function method; subband level broadening; temperature 300 K; terahertz quantum cascade lasers; Gallium nitride; Green´s function methods; Optical scattering; Phonons; Quantum cascade lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
