Title :
GaAs/GaAlAs power HBTs for mobile communications
Author :
Wang, Huifang ; Pinatel, C. ; Tsouli, M. ; Plouchart, J.O. ; Konczykowska, A. ; Riet, M. ; Vuye, S. ; Berdaguer, P.
Author_Institution :
Lab. de Bagneux, France Telecom, France
Abstract :
GaAlAs/GaAs power HBTs (heterojunction bipolar transistors) are investigated for handsets in mobile cellular communication systems at 1.8 GHz. Different HBT operating classes are compared, and the choice of the optimum operating class is discussed. Experimental measurements on a small-chip-size HBT of 0.4*0.4 mm/sup 2/ have shown 1-W output power with a power-added efficiency of 45%.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; mobile communication systems; power amplifiers; power transistors; solid-state microwave devices; telephone sets; 1 W; 1.8 GHz; 45 percent; GaAs-GaAlAs; HBT amplifier; HBT operating classes; TDM systems; handsets; heterojunction bipolar transistors; mobile cellular communication; output power; power HBTs; power-added efficiency; small-chip-size HBT; Distributed control; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Mobile communication; Power amplifiers; Power generation; Power measurement; Silicon; Size measurement;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276879
