GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices

Author

Meng, C.C. ; Fetterman, H.R. ; Streit, D.C. ; Block, T.R. ; Saito, Y.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1993

Firstpage

539

Abstract

The first CW (continuous-wave) operation of GaAs/AlGaAs multiquantum-well IMPATT (impact ionization avalanche transit time) devices at 100 GHz has been achieved. Multiquantum wells were used to generate the avalanche injection current, since these structures improve the nonlinearity of the avalanche process and reduce the ionization rate saturation limitations. The operation and design principle, fabrication procedure, and experimental results for these devices are presented. A 6.4-mW CW power output was achieved at 100.3 GHz.<>

Keywords

III-V semiconductors; IMPATT diodes; aluminium compounds; gallium arsenide; semiconductor quantum wells; 100 GHz; 6.4 mW; CW operation; CW power output; GaAs-AlGaAs; MQW IMPATT; avalanche injection current; high frequency IMPATT devices; ionization rate saturation limitations; multiquantum well structures; Acceleration; Charge carrier processes; Degradation; Fabrication; Frequency; Gallium arsenide; Impact ionization; Linearity; Photonic band gap; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276881

Filename

276881