Title :
V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs
Author :
Matloubian, M. ; Jelloian, L.M. ; Brown, A.S. ; Nguyen, L.D. ; Larson, L.E. ; Delaney, M.J. ; Thompson, M.A. ; Rhodes, R.A. ; Pence, J.E.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
The authors report on the state-of-the-art power performance of InP-based HEMTs (high electron mobility transistors) at 59 GHz. Using a 448- mu m-wide HEMT with a gate-length of 0.15 mu m, an output power of 155 mW with a 4.9-dB gain and a power-added efficiency of 30.1% were obtained. By power-combining two of these HEMTs, an output power of 288 mW with 3.6-dB gain and a power-added efficiency of 20.4% were achieved. This is the highest output power reported with such a high efficiency for InP-based HEMTs, and is comparable to the best results reported for AlGaAs/InGaAs on GaAs pseudomorphic HEMTs at this frequency.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.15 micron; 155 mW; 20.4 percent; 288 mW; 3.6 dB; 30.1 percent; 4.9 dB; 59 GHz; AlInAs-GaInAs-InP; InP; V-band high power HEMT; gate-length; high electron mobility transistors; high-efficiency; output power; power-added efficiency; power-combining; Electrons; Frequency; Gain; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Power generation; Schottky barriers; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276882
