A 0.6-watt U-band monolithic MESFET power amplifier

Author

Ho, T. ; Pande, K. ; Phelleps, F. ; Singer, J. ; Rice, P. ; Adair, J. ; Ghahremani, M.

Author_Institution

COMSAT Lab., Clarksburg, MD, USA

fYear

1993

Firstpage

531

Abstract

A high-performance four-stage monolithic microwave integrated circuit (MMIC) power amplifier chip has been developed using 0.3- mu m gate-length and molecular beam epitaxial (MBE) MESFET technologies. These power MMIC chips have been combined to constitute a 47-GHz power amplifier with an output power of 0.45 W and an associated gain of 16.6 dB. A saturated output power of over 0.58 W was also achieved at 47 GHz. These results represent the highest reported power and gain at U-band from a MMIC amplifier using a 0.3- mu m gate-length MESFET. This amplifier has potential application as a driver for a monolithic doubler to obtain more than 80 mW of transmitted power at 94 GHz for W-band system applications.<>

Keywords

MMIC; field effect integrated circuits; microwave amplifiers; molecular beam epitaxial growth; power amplifiers; 0.3 micron; 0.46 W; 0.58 W; 16.6 dB; 47 GHz; MBE; MMIC; U-band monolithic MESFET power amplifier; driver; four-stage monolithic microwave integrated circuit; gate-length; monolithic doubler; output power; power amplifier chip; saturated output power; High power amplifiers; Integrated circuit technology; MESFET integrated circuits; MMICs; Microwave amplifiers; Microwave integrated circuits; Molecular beam epitaxial growth; Monolithic integrated circuits; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276883

Filename

276883