A submillimeter-wave planar low noise Schottky receiver

Author

Ali-Ahmad, W.Y. ; Bishop, W.L. ; Crowe, T.W. ; Rebeiz, G.M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1993

Firstpage

527

Abstract

A planar quasi-optical Schottky receiver based on the quasi-integrated horn antenna has been developed and tested over the 230-280-GHz bandwidth. The receiver consists of a planar GaAs Schottky diode placed at the feed of a dipole-probe suspended on a thin dielectric membrane in an etched-pyramidal horn cavity. The antenna-mixer results in a measured DSB (double sideband) conversion loss and noise temperature at 258 GHz of 7.2 dB+or-0.5 dB and 1310 K+or-70 K, respectively, at room temperature. The low cost of fabrication and simplicity of the design make it ideal for submillimeter-wave receivers requiring a 10% bandwidth.<>

Keywords

Schottky-barrier diodes; horn antennas; mixers (circuits); receivers; solid-state microwave circuits; submillimetre wave devices; 230 to 280 GHz; 6.7 to 7.7 dB; GaAs; antenna-mixer; dipole probe feed; double sideband conversion loss; etched-pyramidal horn cavity; noise temperature; planar GaAs Schottky diode; planar quasi-optical Schottky receiver; quasi-integrated horn antenna; submillimeter-wave planar low noise Schottky receiver; thin dielectric membrane; Bandwidth; Dielectric loss measurement; Dipole antennas; Feeds; Gallium arsenide; Horn antennas; Receiving antennas; Schottky diodes; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276884

Filename

276884