Title :
A monolithic W-band three-stage LNA using 0.1 mu m InAlAs/InGaAs/InP HEMT technology
Author :
Wang, H. ; Lai, R. ; Chen, T.H. ; Chow, P.D. ; Velebir, J. ; Tan, K.L. ; Streit, D.C. ; Liu, P.H. ; Ponchak, G.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A monolithic W-band three-stage low-noise amplifier (LNA) based on 0.1- mu m pseudomorphic (PM) InAlAs/InGaAs/InP high-electron-mobility transistors (HEMTs) has been developed. This LNA has demonstrated a noise figure of 4.3 dB and an associated small-signal gain of 19 dB at 100 GHz with a low DC power consumption of 20 mW. This demonstrates the potential of InP HEMT technology for higher millimeter-wave applications. The gain and noise performance is comparable with the best reported results of the monolithic W-band LNA using GaAs-based PM HEMTs even at this first iteration phase of the development. The HEMTs discussed consume only 30% of the DC power typically needed in the GaAs-based HEMT LNAs with the same device periphery and design approach.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; noise; 0.1 micron; 100 GHz; 19 dB; 20 mW; 4.3 dB; DC power consumption; InAlAs-InGaAs-InP; InP; LNA; high-electron-mobility transistors; millimeter-wave applications; monolithic W-band three-stage low-noise amplifier; noise figure; pseudomorphic HEMT technology; small-signal gain; Energy consumption; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MODFETs; Millimeter wave technology; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276886
