Title :
A simplified 2D graded mesh FD-TD algorithm for calculating the characteristic impedance of shielded or open planar waveguides with finite metallization thickness
Author :
Krupezevic, D.V. ; Brankovic, V.J. ; Arndt, F.
Author_Institution :
Microwave Dept., Bremen Univ., Germany
Abstract :
A full-wave finite-difference time-domain (FD-TD) algorithm for the efficient calculation of the characteristic impedance of planar waveguiding structures including the finite metallization thickness is described. The FD-TD algorithm is based on a 2D graded mesh combined with adequately formulated absorbing boundary conditions. This allows the inclusion of nearly arbitrarily shaped, fully or partially lateral open or shielded guiding structures with layers of finite metallization thickness. Using a modified formulation, an actual 2D grid for 2D problems is obtained, i.e., the grid size for these problems is zero in the z-direction as long as the waveguide is homogeneous in that direction. The characteristic impedances are calculated by using the related adequate power-voltage or power-current definitions, for structures suitable for the usual types of integrated circuits, such as bilateral finlines, open microstrip lines, lateral open triplate lines, open slotlines, and open coplanar lines.<>
Keywords :
electric impedance; fin lines; finite difference time-domain analysis; metallisation; microstrip lines; strip lines; waveguide theory; 2D graded mesh FD-TD algorithm; absorbing boundary conditions; bilateral finlines; characteristic impedance; finite metallization thickness; full-wave FD-TD algorithm; integrated circuits; lateral open triplate lines; open coplanar lines; open microstrip lines; open planar waveguides; open slotlines; shielded guiding structures; Equations; Finite difference methods; Finline; Impedance; Metallization; Microstrip; Planar waveguides; Time domain analysis; Waveguide components; Waveguide theory;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276897