Title :
180nm 4Mb High Speed High Reliability Embedded SONOS Flash Memory
Author :
Pan, Liyang ; Wu, Dong ; Yang, Guangjun ; Sun, Lei ; Pang, Huiqing ; Zhu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
A 1.8/3.3V 4Mb (512K times 8 bit) embedded SONOS flash memory has been successfully developed and verified with 180nm CMOS logic compatible integrated technology, in which a reverse programming array architecture and a novel high speed sensing circuit with dual-phase precharge path and self-adjusted load are proposed to improve read speed. Moreover, a novel threshold voltage tracking technique is also introduced to improve the reliability. Finally, a 4.4 mm2 core size and a 0.40 mum2 (12.4F2/bit) cell size are obtained, and the test results show that the read speed and the endurance characteristics are 17ns and 105, respectively
Keywords :
CMOS memory circuits; embedded systems; flash memories; high-speed integrated circuits; integrated circuit reliability; 1.8 V; 17 ns; 180 nm; 3.3 V; 4 Mbit; CMOS logic technology; dual-phase precharge path; embedded SONOS flash memory; endurance characteristics; high reliability flash memory; high speed flash memory; high speed sensing circuit; improved read speed; reverse programming array architecture; self-adjusted load; threshold voltage tracking; CMOS logic circuits; CMOS memory circuits; CMOS technology; Flash memory; Integrated circuit reliability; Integrated circuit technology; Logic arrays; Logic programming; Programmable logic arrays; SONOS devices;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320888
