Title :
Internal quantum efficiency in light-emitting diodes based on the width of efficiency-versus-carrier-concentration curve
Author :
Lin, G.-B. ; Shan, Q. ; Birkel, A.J. ; Cho, J. ; Schubert, E.F. ; Koleske, D.D. ; Crawford, M.H.
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Based on the ABC model, we derive a relationship between the internal quantum efficiency (IQE) and the width of the efficiency-versus-carrier-concentration curve. We determine the IQE of LEDs at temperatures ranging from 100K to 300K.
Keywords :
III-V semiconductors; carrier density; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; ABC model; GaInN-GaN; LED; efficiency versus carrier concentration curve width; internal quantum efficiency; light emitting diodes; temperature 100 K to 300 K; Gallium nitride; Laboratories; Light emitting diodes; Modeling; Photoluminescence; Temperature measurement; USA Councils;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
