DocumentCode :
1678741
Title :
Effects of strain relaxation on the photoluminescence of semipolar InGaN
Author :
Metcalfe, Grace D. ; Gallinat, Chad S. ; Shen, Hongen ; Wraback, Michael ; Wienecke, Steven ; Young, Erin C. ; Speck, James S.
Author_Institution :
U.S. Army Res. Lab., Adelphi, MD, USA
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
We present the effects of partial strain relaxation on the optical properties in lattice mismatched semipolar (1122) InGaN using polarization-dependent photoluminescence measurements to probe the strain dependent band mixing of the valence bands.
Keywords :
III-V semiconductors; compressive strength; gallium compounds; indium compounds; mixing; photoluminescence; valence bands; InGaN; compressive strength; lattice mismatched semipolar indium gallium nitride; optical properties; polarization dependent photoluminescence; strain dependent band mixing; strain relaxation effects; valence bands; Excitons; Gallium nitride; Optical polarization; Optical variables measurement; Strain; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326604
Link To Document :
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