• DocumentCode
    1678741
  • Title

    Effects of strain relaxation on the photoluminescence of semipolar InGaN

  • Author

    Metcalfe, Grace D. ; Gallinat, Chad S. ; Shen, Hongen ; Wraback, Michael ; Wienecke, Steven ; Young, Erin C. ; Speck, James S.

  • Author_Institution
    U.S. Army Res. Lab., Adelphi, MD, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present the effects of partial strain relaxation on the optical properties in lattice mismatched semipolar (1122) InGaN using polarization-dependent photoluminescence measurements to probe the strain dependent band mixing of the valence bands.
  • Keywords
    III-V semiconductors; compressive strength; gallium compounds; indium compounds; mixing; photoluminescence; valence bands; InGaN; compressive strength; lattice mismatched semipolar indium gallium nitride; optical properties; polarization dependent photoluminescence; strain dependent band mixing; strain relaxation effects; valence bands; Excitons; Gallium nitride; Optical polarization; Optical variables measurement; Strain; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1678741