• DocumentCode
    1678849
  • Title

    Enhancement of light extraction efficiency for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride microspheres

  • Author

    Zhao, Peng ; Sun, Di ; Zhao, Hongping

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride microspheres on the p-type layer shows significant light extraction efficiency enhancement (>;5.7 times) of the dominant transverse magnetic polarized spontaneous emission.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; semiconductor quantum wells; spontaneous emission; III-nitride microspheres; deep ultraviolet AlGaN quantum wells; light extraction efficiency enhancement; light-emitting diodes; p-type layer; transverse magnetic polarized spontaneous emission; Aluminum gallium nitride; Light emitting diodes; Optical polarization; Quantum computing; Quantum well devices; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1678849