Title :
Enhancement of light extraction efficiency for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride microspheres
Author :
Zhao, Peng ; Sun, Di ; Zhao, Hongping
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
Deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride microspheres on the p-type layer shows significant light extraction efficiency enhancement (>;5.7 times) of the dominant transverse magnetic polarized spontaneous emission.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; semiconductor quantum wells; spontaneous emission; III-nitride microspheres; deep ultraviolet AlGaN quantum wells; light extraction efficiency enhancement; light-emitting diodes; p-type layer; transverse magnetic polarized spontaneous emission; Aluminum gallium nitride; Light emitting diodes; Optical polarization; Quantum computing; Quantum well devices; Spontaneous emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
