• DocumentCode
    1678956
  • Title

    A W-band wafer probe

  • Author

    Godshalk, E.M.

  • Author_Institution
    Cascade Microtech Inc., Beaverton, OR, USA
  • fYear
    1993
  • Firstpage
    171
  • Abstract
    A W-band (75-110 GHz) wafer probe was successfully designed and built. The probe uses a ridge-trough waveguide as a transition from a rectangular waveguide input to the coplanar waveguide (CPW) used on the probe board output. Typical insertion loss and return loss figures were 3.5 dB and better than 13 dB, respectively. Losses were minimized in the CPW probe board by attention to conductor loss and taper design; in addition, the transition from rectangular waveguide to ridge-trough waveguide led to an insertion loss less than 1 dB. A crosstalk figure of better than -43 dB was achieved, which is important for accurate calibrations. These performance specifications allowed measured data to be corrected by a VNA for some W-band HEMT (high electron mobility transistor) devices.<>
  • Keywords
    high electron mobility transistors; microwave measurement; probes; rectangular waveguides; semiconductor device testing; solid-state microwave devices; 3.5 dB; 75 to 110 GHz; VNA; W-band HEMT; W-band wafer probe; conductor loss; coplanar waveguide; crosstalk figure; insertion loss; rectangular waveguide; return loss; ridge-trough waveguide; taper design; Calibration; Conductors; Coplanar waveguides; Crosstalk; HEMTs; Insertion loss; MODFETs; Probes; Rectangular waveguides; Waveguide transitions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1993., IEEE MTT-S International
  • Conference_Location
    Atlanta, GA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-1209-0
  • Type

    conf

  • DOI
    10.1109/MWSYM.1993.276917
  • Filename
    276917