DocumentCode
1678956
Title
A W-band wafer probe
Author
Godshalk, E.M.
Author_Institution
Cascade Microtech Inc., Beaverton, OR, USA
fYear
1993
Firstpage
171
Abstract
A W-band (75-110 GHz) wafer probe was successfully designed and built. The probe uses a ridge-trough waveguide as a transition from a rectangular waveguide input to the coplanar waveguide (CPW) used on the probe board output. Typical insertion loss and return loss figures were 3.5 dB and better than 13 dB, respectively. Losses were minimized in the CPW probe board by attention to conductor loss and taper design; in addition, the transition from rectangular waveguide to ridge-trough waveguide led to an insertion loss less than 1 dB. A crosstalk figure of better than -43 dB was achieved, which is important for accurate calibrations. These performance specifications allowed measured data to be corrected by a VNA for some W-band HEMT (high electron mobility transistor) devices.<>
Keywords
high electron mobility transistors; microwave measurement; probes; rectangular waveguides; semiconductor device testing; solid-state microwave devices; 3.5 dB; 75 to 110 GHz; VNA; W-band HEMT; W-band wafer probe; conductor loss; coplanar waveguide; crosstalk figure; insertion loss; rectangular waveguide; return loss; ridge-trough waveguide; taper design; Calibration; Conductors; Coplanar waveguides; Crosstalk; HEMTs; Insertion loss; MODFETs; Probes; Rectangular waveguides; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.276917
Filename
276917
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