Title :
An 8-mW, ESD-protected, CMOS LNA for Ultra-Wideband Applications
Author :
Bhatia, Karan ; Hyvonen, Sami ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
Abstract :
A common-gate, 7.9mW, ESD-protected, CMOS ultra-wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S21 (15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (3-4dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz
Keywords :
CMOS integrated circuits; low noise amplifiers; ultra wideband communication; 3 to 4 dB; 4.25 kV; 5 GHz; 7.9 mW; 8 mW; CMOS LNA; ESD protected LNA; HBM; common gate; ultra wideband applications; wideband transconductance; Character generation; Circuits; Electrostatic discharge; Impedance matching; Inductors; Network topology; Noise figure; Protection; Radio frequency; Ultra wideband technology;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320955
