Title :
X/Ku Band CMOS LNA Design Techniques
Author :
Afshar, Bagher ; Niknejad, Ali M.
Author_Institution :
Dept. of EECS, California Univ., Berkeley, CA
Abstract :
This paper reports two 11 GHz low-noise amplifiers (LNA) in 0.18mum CMOS technology. A cascade two stage LNA achieves 12 dB of power gain, 3.5 dB of noise figure, and an input/output match of -15 dB/-27 dB at 11GHz, while consuming 28mA from 1.8V supply. The second LNA is a modified cascode amplifier and it achieves 8 dB of gain, 3.1 dB of noise figure, and an input/output match of -12 dB/-15 dB at 11GHz, consuming 18mA from the 1.8V supply. The paper also discusses design considerations such the effects of layout on frequency tuning and noise
Keywords :
CMOS integrated circuits; integrated circuit design; low noise amplifiers; 0.18 micron; 1.8 V; 11 GHz; 12 dB; 18 mA; 28 mA; 3.1 dB; 3.5 dB; 8 dB; CMOS technology; LNA; X/Ku band; cascode amplifier; frequency tuning; low noise amplifiers; noise figure; CMOS technology; Circuits; Frequency; Gain; Impedance matching; Inductors; Linearity; Microwave devices; Noise figure; USA Councils;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320956
