Title :
A highly integrated MMIC K-band transmit/receive chip
Author :
Fudem, H. ; Moghe, S. ; Dietz, G. ; Consolazio, S.
Author_Institution :
Northrop Electron. Syst. Div., Rolling Meadows Site, IL, USA
Abstract :
A highly integrated wideband MMIC (monolithic microwave integrated circuit) T/R (transmit/receive) chip was designed for both commercial and military FM CW (continuous-wave) applications. The MMIC circuit was designed using 0.25- mu m pseudomorphic HEMT (high electron mobility transistor) technology. The T/R chip has three three-stage amplifiers, an active power divider, a diode double-balanced mixer, and a voltage-controller oscillator (VCO), all integrated on a single chip 96 mils*71 mils (2.4 mm*1.8 mm) in size. High-density layout techniques help to keep the chip size small, thereby assuring high yield.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; mixers (circuits); variable-frequency oscillators; waveguide couplers; 0.25 micron; FM CW applications; K-band; diode double-balanced mixer; layout techniques; power divider; pseudomorphic HEMT; three-stage amplifiers; transmit/receive chip; voltage-controller oscillator; wideband MMIC; yield; Application specific integrated circuits; HEMTs; K-band; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Voltage-controlled oscillators; Wideband;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276925
