Title :
Optimization of Surface Orientation for High-Performance, Low-Power and Robust FinFET SRAM
Author :
Gangwal, Saakshi ; Mukhopadhyay, Saibal ; Roy, Kaushik
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
We analyze the impact of surface orientation on stability, performance and power of 6-T and 8-T FinFET SRAMs. We show that, in comparison to 32nm 6-T FinFET SRAM cell with devices of (110) orientation, multi-oriented devices with optimized orientation can improve the static noise margin (SNM) by 23-35% and access time (~22-33%), while consuming the same leakage power. For 8-T FinFET SRAM, multi-oriented devices can improve write stability substantially (~17%) with negligible area overhead
Keywords :
MOSFET; SRAM chips; 32 nm; FinFET SRAM cell; multioriented devices; static noise margin; surface orientation; Atomic measurements; Electron mobility; FinFETs; MOS devices; Performance analysis; Random access memory; Robustness; Rough surfaces; Stability analysis; Surface roughness;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.321009
