DocumentCode
1679440
Title
CNT based mechanical devices for ULSI memory
Author
Jang, J.E. ; Cha, S.N. ; Choi, Y. ; Kang, D.J. ; Butler, T.P. ; Hasko, D.G. ; Kim, J.M. ; Amaratunga, G.A.J.
Author_Institution
Dept. of Eng., Cambridge Univ.
fYear
2006
Firstpage
461
Lastpage
464
Abstract
Nanoelectromechanical (NEM) devices were developed for memory. The concept of a switch unit employing carbon nanotubes (CNT) was extended to random access memory (RAM). The unique vertical structure of these nanotubes allows a high integration density for devices. The easy fabrication process can give a high yield and reliability to device
Keywords
ULSI; carbon nanotubes; integrated circuit reliability; integrated circuit yield; memory architecture; random-access storage; ULSI memory; carbon nanotubes based mechanical devices; device reliability; device yield; high integration density; nanoelectromechanical devices; random access memory; Capacitors; Chromium; Electrodes; Electrostatics; Fabrication; Force measurement; Random access memory; Switches; Ultra large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location
San Jose, CA
Print_ISBN
1-4244-0075-9
Electronic_ISBN
1-4244-0076-7
Type
conf
DOI
10.1109/CICC.2006.320822
Filename
4115002
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