Title :
CNT based mechanical devices for ULSI memory
Author :
Jang, J.E. ; Cha, S.N. ; Choi, Y. ; Kang, D.J. ; Butler, T.P. ; Hasko, D.G. ; Kim, J.M. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
Nanoelectromechanical (NEM) devices were developed for memory. The concept of a switch unit employing carbon nanotubes (CNT) was extended to random access memory (RAM). The unique vertical structure of these nanotubes allows a high integration density for devices. The easy fabrication process can give a high yield and reliability to device
Keywords :
ULSI; carbon nanotubes; integrated circuit reliability; integrated circuit yield; memory architecture; random-access storage; ULSI memory; carbon nanotubes based mechanical devices; device reliability; device yield; high integration density; nanoelectromechanical devices; random access memory; Capacitors; Chromium; Electrodes; Electrostatics; Fabrication; Force measurement; Random access memory; Switches; Ultra large scale integration; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320822
