A highly-efficient 7-watt 16 GHz monolithic pseudomorphic HEMT amplifier

Author

Tserng, H.Q. ; Saunier, P.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1993

Firstpage

87

Abstract

High-power monolithic microwave integrated circuit (MMIC) amplifiers using pseudomorphic AlGaAs/InGaAs high electron mobility transistors (HEMTs) were demonstrated at Ku-band. A record continuous-wave (CW) output power of 7 W with 4.5-dB gain and 30.8% power-added efficiency was achieved with a single-stage, 0.25 mu m*12-mm amplifier at 16.3 GHz. At 5-W output, the power-added efficiency was 35% with 6-dB power gain. The demonstrated performance makes pseudomorphic HEMTs highly suitable for multiwatt MMIC amplifier implementations at X- and Ku-band frequencies for advanced microwave system applications.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; power amplifiers; 16.3 GHz; 30.8 percent; 35 percent; 4.5 dB; 5 W; 6 dB; 7 W; AlGaAs-InGaAs; CW output power; Ku-band; Ku-band frequencies; X-band; advanced microwave system applications; monolithic microwave integrated circuit; monolithic pseudomorphic HEMT amplifier; multiwatt MMIC amplifier; power-added efficiency; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; MODFETs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276936

Filename

276936