Title :
Direct nonlinear power MESFET parameter extraction and consistent modeling
Author :
Werthof, A. ; van Raay, F. ; Kompa, G.
Author_Institution :
Dept. of High-Frequency Eng., Kassel Univ., Germany
Abstract :
A novel method is developed which permits a direct nonlinear FET parameter extraction of the gate source capacitor and diode, the drain current generator, and the avalanche breakdown characteristics from large-signal waveform measurements. Differences between the DC and RF characteristics of the drain current generator and the breakdown characteristics are observed and interpreted. The measured FET output power and phase spectra are compared with simulated results for different RF models of the nonlinear drain current generator. The proposed method is a valuable instrument for the analysis of the existing high-frequency FET nonlinearities and can be used to improve large-signal FET models.<>
Keywords :
Schottky gate field effect transistors; equivalent circuits; power transistors; semiconductor device models; solid-state microwave devices; DC characteristics; RF characteristics; avalanche breakdown characteristics; diode; direct nonlinear FET parameter extraction; drain current generator; gate source capacitor; high-frequency FET nonlinearities; large-signal FET models; large-signal waveform measurements; modeling; power MESFET; Capacitors; Character generation; Current measurement; DC generators; Diodes; FETs; MESFETs; Parameter extraction; Power generation; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276989
