Forming-Free ZrOx-Based Electrochemical Metallization ReRAM by Sol-Gel Technique

Author

Fun-Tat Chin ; Yu-Hsien Lin ; Yu-Ping Hsiao ; Wen-Luh Yang

Author_Institution

Electr. & Commun. Eng., Feng Chia Univ., Taichung, Taiwan

fYear

2014

fDate

10-12 June 2014

Firstpage

474

Lastpage

477

Abstract

In this work, the sol-gel derived ZrO_x thin film as switching layer is proposed for Cu/ZrO_x/TaN ReRAM device application. The resistive switching behavior is suggested to the formation and rupture Cu conductive filaments. The device shows the good electrical properties including forming free, low switching voltages (set/reset), high on/off ratio, better uniformity of Set/Reset and HRS/LRS distributions, and good stability data retention characteristics. Beside, the good switching property is due to the porous structure of sol-gel derived ZrO_x thin film leading Cu ion fast migration into switching layer.

Keywords

copper; integrated circuit metallisation; random-access storage; sol-gel processing; tantalum compounds; thin film devices; zirconium compounds; Cu-ZrO_x-TaN; HRS-LRS distributions; conductive filaments; data retention characteristics; electrical properties; forming-free-based electrochemical metallization ReRAM; high on-off ratio; low switching voltages; porous structure; resistive random access memory device application; resistive switching behavior; set-reset distributions; sol-gel technique; switching layer; thin film; Electrodes; Electron devices; Ions; Metals; Nonvolatile memory; Resistance; Switches; Resistive Random Access Memory (ReRAM); Sol-gel technique; ZrOx switching layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer, Consumer and Control (IS3C), 2014 International Symposium on

Conference_Location

Taichung

Type

conf

DOI

10.1109/IS3C.2014.130

Filename

6845922