DocumentCode
1680850
Title
Low noise device and amplifier characterization for deep space communication applications
Author
Laskar, J. ; Bautista, J.J. ; Fujiwara, B. ; Scherrer, D. ; Feng, M.
Author_Institution
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
fYear
1993
Firstpage
1095
Abstract
A systematic cryogenic on-wafer study of advanced FET technology is performed, and an empirical model for the cryogenic operation of ion-planted MESFET technology is presented. Multistage HEMT (high electron mobility transistor)-based LNAs (low-noise amplifiers) have been fabricated and characterized for operation at Ka-band. The feasibility of broadband on-wafer S-parameter and noise parameter measurement has been demonstrated. Such a measurement tool should provide important data for LNA development.<>
Keywords
MMIC; field effect integrated circuits; microwave amplifiers; microwave links; space communication links; FET technology; Ka-band; amplifier characterization; broadband on-wafer S-parameter; cryogenic on-wafer study; deep space communication applications; ion-planted MESFET; multistage HEMT-based LNAs; noise parameter; Extraterrestrial measurements; Gallium arsenide; HEMTs; Lattices; Low-noise amplifiers; MESFETs; MODFETs; Semiconductor device noise; Space technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.277058
Filename
277058
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