DocumentCode
1680896
Title
SiGe BiCMOS Trends - Today and Tomorrow
Author
Dunn, J. ; Harame, D.L. ; Joseph, A.J. ; Onge, S. A St ; Feilchenfeld, N.B. ; Lanzerotti, L. ; Orner, B. ; Gebreselasie, E. ; Johnson, J.B. ; Coolbaugh, D.D. ; Rassel, R. ; Khater, M.
Author_Institution
IBM, Semicond. Res. & Dev. Center, Essex Junction, VT
fYear
2006
Firstpage
695
Lastpage
702
Abstract
High performance communications applications have made technology choices more important than ever. Silicon germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capability, compared to III-V solutions and, relative to RFCMOS, one can attain better time to market. BiCMOS integration approaches for high performance and cost performance NPN modules and state of the art passive elements are discussed as well as future technology directions
Keywords
BiCMOS integrated circuits; Ge-Si alloys; BiCMOS trends; NPN modules; RFCMOS; SiGe; high performance communications; BiCMOS integrated circuits; CMOS technology; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Noise figure; Radio frequency; Silicon germanium; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location
San Jose, CA
Print_ISBN
1-4244-0075-9
Electronic_ISBN
1-4244-0076-7
Type
conf
DOI
10.1109/CICC.2006.320882
Filename
4115051
Link To Document