Title :
A low power GaAs MESFET monolithic downconverter for digital handheld telephone applications
Author_Institution :
Motorola SPS, Tempe, AZ, USA
Abstract :
A monolithic GaAs MESFET downconverter for 1.9-GHz digital handheld telephone applications has been designed and fabricated. The downconverter operates from a single supply, and uses no dual gate or series biased FETs, which allows operation at lower supply voltages. The circuit exhibits 22 dB of conversion gain and a 3.9-dB noise figure at a bias of 2.7 V and 5 mA, with an LO (local oscillator) drive of -10 dBm. For a supply voltage of 1.25 V and an LO drive level of -13 dBm, a conversion gain of 17.2 dB and a noise figure of 4.3 dB are obtained.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; cordless telephone systems; field effect integrated circuits; frequency convertors; gallium arsenide; 1.25 V; 1.9 GHz; 17.2 dB; 2.7 V; 22 dB; 3.9 dB; 4.3 dB; 5 mA; GaAs; LO drive level; MESFET monolithic downconverter; conversion gain; digital handheld telephone; supply voltages; Circuits; FETs; Gain; Gallium arsenide; Low voltage; MESFETs; Noise figure; Telephone sets; Telephony; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277061
