Title :
Compact modeling of noise in CMOS
Author :
Scholten, A.J. ; van Langevelde, R. ; Tiemeijer, L.F. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Eur., Eindhoven
Abstract :
The physical background of the thermal noise equations of the PSP MOSFET model is presented. The PSP thermal noise model is shown to pass a number of proposed benchmark tests for MOSFET thermal noise. Without any fitting parameters, it is shown to predict with great accuracy a collection of experimental data on three modern CMOS technologies. The impact of device layout on noise properties is discussed and demonstrated experimentally
Keywords :
CMOS integrated circuits; MOSFET; thermal noise; CMOS technologies; PSP MOSFET model; compact noise modeling; thermal noise equations; 1f noise; Benchmark testing; CMOS technology; Circuit noise; Equations; MOSFET circuits; Semiconductor device modeling; Temperature; Transfer functions; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0075-9
Electronic_ISBN :
1-4244-0076-7
DOI :
10.1109/CICC.2006.320898
