The Growth and Analyses of CuInSe2 Absorption Layer for a CIS Thin Film Solar Cell

In this study, the formation of CuInSe₂ is based on the Cu/In alloy and selenization processes. First of all, the Cu and In layers is formed by the Bi-layer, Multi-layer and the Co-sputter sputtering processes, respectively. Then annealing process of Cu and In layers is carried out to form the Cu/In alloy, And the CuInSe₂ thin film is formed through the selenization heat treatment of this Cu/In alloy. The selenization heat treatment is processed with Se powder inside vacuum quartz tube to form the CuInSe₂ absorption layer. Among above three different sputtering processes, the best preparation of Cu/In alloy is carried out through the Co-sputter process with 150°C annealing, and then processed through 550°C selenization leading to the best formation of CuInSe₂. This CuInSe₂ absorption layer obtained by Co-sputter method under above processes has better performance, its XRD analysis diagram shows that the growth direction of crystal structure in CuInSe₂ providing better intensity and less secondary phase of Cu_xSe_y and In_xSe_y.