DocumentCode
1681029
Title
Application characteristics of an experimental RB-IGBT (reverse blocking IGBT) module
Author
Motto, E.R. ; Donlon, J.F. ; Tabata, M. ; Takahashi, H. ; Yu, Y. ; Majumdar, G.
Author_Institution
Powerex Inc., Youngwood, PA, USA
Volume
3
fYear
2004
Firstpage
1540
Abstract
This paper describes the characteristics of a new 1200 V, 100 A reverse blocking IGBT chip. It will be shown that this new chip exhibits symmetrical off-state blocking voltage and low losses making it a promising candidate for power conversion topologies such as matrix converters, current source inverters, and AC switches. A prototype module configured for the matrix converter application using the new RB-IGBT will also be presented.
Keywords
insulated gate bipolar transistors; invertors; losses; matrix convertors; power semiconductor switches; switching convertors; 100 A; 1200 V; AC switches; current source inverters; insulated gate bipolar transistor; matrix converters; off-state blocking voltage; power conversion topologies; reverse blocking IGBT; Capacitors; Hybrid electric vehicles; Insulated gate bipolar transistors; Inverters; Matrix converters; Multichip modules; Power conversion; Semiconductor devices; Topology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE
ISSN
0197-2618
Print_ISBN
0-7803-8486-5
Type
conf
DOI
10.1109/IAS.2004.1348675
Filename
1348675
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