A user-optimized electro-thermal IGBT model for power electronic circuit simulation in the circuit simulator ELDO

Author

Fatemizadeh, B. ; Tchouangue, G. ; Silber, D.

Author_Institution

Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA

Volume

1

fYear

1996

Firstpage

81

Abstract

The authors present a user-optimized electro-thermal IGBT model for power electronic circuit simulation. The proposed model has been efficiently implemented in the circuit simulator ELDO for the purpose of reaching low simulation time and high convergence safety. The relevant physical effects are considered as well as different device design structures. The number of model parameters is reduced to a minimum since some of them are internally calculated

Keywords

circuit analysis computing; insulated gate bipolar transistors; power bipolar transistors; power engineering computing; semiconductor device models; software packages; thermal analysis; ELDO; circuit simulator; computer simulation; convergence safety; electro-thermal IGBT model; power electronic circuit simulation; simulation time; user-optimization; Circuit simulation; Convergence; Geometry; Insulated gate bipolar transistors; Power electronics; Power system modeling; Radiative recombination; Semiconductor devices; Semiconductor materials; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual

Conference_Location

San Jose, CA

Print_ISBN

0-7803-3044-7

Type

conf

DOI

10.1109/APEC.1996.500426

Filename

500426