DocumentCode
1681214
Title
Compact SiGe HBT EO modulator for analog applications
Author
Wu, Pengfei ; Deng, Shengling ; Huang, Z. Rena
Author_Institution
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
This paper proposed a compact linearized SiGe HBT EO modulator for applications in analog signal processing. The length of the modulator is only 15 μm. Simulation shows that it possesses a SFDR of 42 dB.
Keywords
Ge-Si alloys; electro-optical modulation; heterojunction bipolar transistors; optical information processing; HBT; SFDR; SiGe; analog signal processing; electro-optical modulator; heterojunction bipolar transistors; wavelength 15 mum; Electrooptic modulators; Electrooptical waveguides; Frequency modulation; Heterojunction bipolar transistors; Silicon; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326705
Link To Document