Accurate and efficient modeling of hetero-FETs

Efficient numerical methods which are usually used in electromagnetic field problems are applied to solve Schrodinger´s equation for semiconductors. The energy band structure of microwave heterostructure FETs is obtained by solving Poisson´s and Schrodinger´s equations self-consistently. The results obtained are used together with a 2D Monte-Carlo code to simulate the physical operation of the device. The model offers an accurate and efficient way to determine the DC and RF characteristics. This method offers an accurate way to model heterostructure devices in a reasonable CPU (central processing unit) time. The capture of the carriers in the 2D electron gas region is well simulated, and the transfer between heterostructure layers is modeled in a simpler and more efficient way than with other simulators.<>