DocumentCode :
16814
Title :
Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces
Author :
Nanen, Y. ; Kato, Masaaki ; Suda, Jun ; Kimoto, Tatsuya
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Volume :
60
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
1260
Lastpage :
1262
Abstract :
Effects of nitric oxide (NO) and nitrous oxide (N2O) annealing on 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on the (0001), (0001̅), and (112̅0) faces are investigated. MOSFETs on (112̅0) exhibited high channel mobility (108 cm2/V·s) compared to those on (0001) (29-37 cm2/V·s) and (0001̅) (39-46 cm2/V·s). The MOSFET characteristics are discussed in terms of oxidation taking place during the nitridation annealing and crystal faces.
Keywords :
MOSFET; nitridation; oxidation; rapid thermal annealing; silicon compounds; wide band gap semiconductors; 4H-SiC MOSFET; SiC; crystal face; high channel mobility; metal-oxide-semiconductor field-effect transistor; nitridation annealing; oxidation; Annealing; Interface states; Logic gates; Nitrogen; Oxidation; Silicon carbide; Crystal orientations; metal–oxide–semiconductor (MOS) field-effect transistor (MOSFET); silicon carbide (SiC);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2236333
Filename :
6415265
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=16814
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