DocumentCode :
1681444
Title :
Monolithic photoconductive ultra-wideband RF device
Author :
Kim, A. ; Domenico, L.D. ; Youmans, R. ; Balekdjian, A. ; Weiner, M. ; Jasper, L.
Author_Institution :
US Army Res. Lab., Ft. Monmouth, NJ, USA
fYear :
1993
Firstpage :
1221
Abstract :
A monolithic, photoconductive, ultrawideband RF radiating device has been successfully demonstrated. This device integrates the functions of energy storage, switch, and antenna onto a single semi-insulating GaAs wafer substrate so that the electrostatic energy storage in the device directly converts into ultrawideband RF radiation. Pulse biasing the device to +2 kV and -2 kV, and subsequently triggering the device resulted in peak power intensities as high as 14.8 W/cm at a distance of 40 cm.<>
Keywords :
antennas; energy storage devices; photoconducting devices; semiconductor switches; -2 kV; 2 kV; GaAs wafer substrate; antenna; electrostatic energy; energy storage; peak power intensities; photoconductive devices; pulse biasing; ultrawideband RF radiating device; Electrodes; Energy storage; Optical pulses; Optical transmitters; Photoconducting devices; Pulse transformers; Radio frequency; Spirals; Switches; Ultra wideband technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1209-0
Type :
conf
DOI :
10.1109/MWSYM.1993.277092
Filename :
277092
Link To Document :
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