Title :
mm-wave confocal resonators for vertical structure profiling in semiconducting and superconducting materials
Author :
Martens, J.S. ; Lee, L. ; Char, K. ; Withers, R. ; Zhang, D. ; Hietala, V.M. ; Tigges, C.P. ; Zolper, J.
Author_Institution :
Conductus Inc., Sunnyvale, CA, USA
Abstract :
The application of the confocal resonator technique to vertical profiling problems for a number of interesting structure types is demonstrated. From the frequency dependence of surface impedance, the vertical conductivity/permittivity profiles are determined for a variety of devices and device materials including implanted Si and GaAs wafers and superconductor-dielectric interfaces. The vertical spatial resolution can be small as several nanometers, and the accuracy of the complex permittivity generally is better than 3%.<>
Keywords :
electrical conductivity measurement; microwave measurement; permittivity measurement; resonators; GaAs; Si; complex permittivity; mm-wave confocal resonators; semiconducting materials; superconducting materials; superconductor-dielectric interfaces; surface impedance; vertical conductivity/permittivity profiles; vertical spatial resolution; vertical structure profiling; Conducting materials; Conductivity; Frequency dependence; Gallium arsenide; Permittivity; Semiconductivity; Semiconductor materials; Spatial resolution; Superconducting materials; Surface impedance;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.277098
