• DocumentCode
    1681682
  • Title

    A comparison of MOSFETs, IGBTs, and MCTs for solid state circuit breakers

  • Author

    Boudreaux, R.R. ; Nelms, R.M.

  • Author_Institution
    Dept. of Electr. Eng., Auburn Univ., AL, USA
  • Volume
    1
  • fYear
    1996
  • Firstpage
    227
  • Abstract
    Circuit breakers have traditionally employed mechanical methods to interrupt excessive currents. Semiconductor advances in power electronics have generated interest in replacing these mechanical circuit breakers with solid-state equivalents. Advantages of solid-state circuit breakers may include faster fault interrupting, fault current limiting, increased repeatability and reliability, no arc to contain or extinguish, and intelligent power control. This paper provides a comparison of three power electronic device families and their suitability to operate in solid-state circuit breaker applications up to 600 volts and 50 amperes
  • Keywords
    MOS-controlled thyristors; bipolar transistor switches; circuit breakers; field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power field effect transistors; power semiconductor switches; thyristors; 50 A; 600 V; IGBT; MCT; MOSFET; applications; excessive current interruption; fault current limiting; fault interruption; intelligent power control; reliability; repeatability; solid-state circuit breakers; suitability; Circuit breakers; Circuit faults; Fault currents; Insulated gate bipolar transistors; Intelligent control; MOSFETs; Power control; Power electronics; Power generation; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-3044-7
  • Type

    conf

  • DOI
    10.1109/APEC.1996.500447
  • Filename
    500447