DocumentCode
1681682
Title
A comparison of MOSFETs, IGBTs, and MCTs for solid state circuit breakers
Author
Boudreaux, R.R. ; Nelms, R.M.
Author_Institution
Dept. of Electr. Eng., Auburn Univ., AL, USA
Volume
1
fYear
1996
Firstpage
227
Abstract
Circuit breakers have traditionally employed mechanical methods to interrupt excessive currents. Semiconductor advances in power electronics have generated interest in replacing these mechanical circuit breakers with solid-state equivalents. Advantages of solid-state circuit breakers may include faster fault interrupting, fault current limiting, increased repeatability and reliability, no arc to contain or extinguish, and intelligent power control. This paper provides a comparison of three power electronic device families and their suitability to operate in solid-state circuit breaker applications up to 600 volts and 50 amperes
Keywords
MOS-controlled thyristors; bipolar transistor switches; circuit breakers; field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power field effect transistors; power semiconductor switches; thyristors; 50 A; 600 V; IGBT; MCT; MOSFET; applications; excessive current interruption; fault current limiting; fault interruption; intelligent power control; reliability; repeatability; solid-state circuit breakers; suitability; Circuit breakers; Circuit faults; Fault currents; Insulated gate bipolar transistors; Intelligent control; MOSFETs; Power control; Power electronics; Power generation; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual
Conference_Location
San Jose, CA
Print_ISBN
0-7803-3044-7
Type
conf
DOI
10.1109/APEC.1996.500447
Filename
500447
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