DocumentCode
1681966
Title
Ultra-high performance rugged scaled power MOSFETs for high-frequency power conversion
Author
Fischer, Kevin ; Shenai, Krishna
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Volume
1
fYear
1996
Firstpage
270
Abstract
The ruggedness and performance of ultra-high density low-voltage power MOSFETs are reported. It is shown that rugged power MOSFETs with ultra-high static and switching performance can be developed using scaled silicon technologies. The experimental results are supported with extensive numerical simulations which clearly show important physical effects as the technology is scaled
Keywords
elemental semiconductors; power MOSFET; power conversion; power semiconductor switches; semiconductor materials; silicon; high-frequency power conversion; low-voltage power MOSFET; nonisothermal simulation; rugged scaled power MOSFET; silicon; ultra-high density; ultra-high static performance; ultra-high switching performance; unclamped inductive switching; Bipolar transistors; Circuit testing; Contact resistance; Inductors; MOSFETs; Numerical simulation; Power conversion; Silicon; Surface resistance; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual
Conference_Location
San Jose, CA
Print_ISBN
0-7803-3044-7
Type
conf
DOI
10.1109/APEC.1996.500454
Filename
500454
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