• DocumentCode
    1682046
  • Title

    A GaN MOSFET supply modulator compatible with feed forward loop for wideband envelope tracking power amplifier

  • Author

    Zhancang Wang ; Li Wang ; Rui Ma ; Lanfranco, Sandro

  • Author_Institution
    CTO Res., Nokia Siemens Networks, Beijing, China
  • fYear
    2013
  • Firstpage
    76
  • Lastpage
    78
  • Abstract
    In this paper, a novel supply modulator for envelope tracking power amplifier was presented, which boosts operation bandwidth capability to tracking up to LTE 60MHz by utilizing GaN MOSFET and compatible with feed forward loop to linearize the modulator for wideband, realizing high efficiency trading off linearity as well.
  • Keywords
    III-V semiconductors; Long Term Evolution; MOSFET; feedforward; gallium compounds; modulators; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; LTE; MOSFET supply modulator; feedforward loop; frequency 60 MHz; operation bandwidth capability; wideband envelope tracking power amplifier; wideband modulator; Feeds; Gallium nitride; MOSFET; Modulation; Nonlinear distortion; Power amplifiers; Switches; Compound semiconductor; GaN MOSFET; energy efficiency; power amplifiers; power supplies;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Symposium (RWS), 2013 IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    2164-2958
  • Print_ISBN
    978-1-4673-2929-3
  • Electronic_ISBN
    2164-2958
  • Type

    conf

  • DOI
    10.1109/RWS.2013.6486646
  • Filename
    6486646