Title :
Low-power CMOS inductorless bandwidth-enhanced transimpedance amplifier for short-haul applications
Author :
Taghavi, Mohammad Hossein ; Ahmadi, Pouyan ; Belostotski, Leonid ; Haslett, J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
A new technique using parallel current-based circuits and resistive compensation to realize an inductorless transimpedance amplifier (TIA) with enhanced bandwidth is introduced. An example TIA implemented in 0.13μm 1.2V standard CMOS achieves 3dB bandwidth of 11.2GHz when driven by a large 500fF photodiode capacitance. This design enhances the bandwidth by a factor of 3.86 with less than 0.1dB gain ripple, achieving the highest figure of merit among published 20Gb/s inductorless 0.13μm CMOS designs for short-haul applications.
Keywords :
CMOS integrated circuits; capacitance; compensation; low-power electronics; operational amplifiers; photodiodes; TIA; bandwidth 11.2 GHz; bit rate 20 Gbit/s; gain ripple; low-power CMOS inductorless bandwidth-enhanced transimpedance amplifier; parallel current-based circuits; photodiode capacitance; resistive compensation; short-haul applications; size 0.13 mum; standard CMOS design; voltage 1.2 V; Bandwidth; CMOS integrated circuits; CMOS technology; Capacitance; Noise; Photodiodes;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2013 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-2929-3
Electronic_ISBN :
2164-2958
DOI :
10.1109/RWS.2013.6486648
