DocumentCode
1682105
Title
Non-invasive waveform probing for nonlinear network analysis
Author
Wei, C.J. ; Tkachenko, Y.A. ; Hwang, J.C.M.
Author_Institution
Lehigh Univ., Bethlehem, PA, USA
fYear
1993
Firstpage
1347
Abstract
A noninvasive technique has been developed for the measurement of fundamental and harmonic S-parameters as functions of input frequency and power. This technique was demonstrated on a GaAs FET by plotting its drain current versus voltage trajectory at 5 GHz. By superimposing the RF trajectory on the DC characteristics, the origin of the device nonlinearity was clearly shown. The results make it possible to characterize the nonlinear behavior and to verify the large-signal model of the device in both the time and the frequency domains.<>
Keywords
S-parameters; microwave measurement; semiconductor device testing; solid-state microwave devices; DC characteristics; FET; GaAs; RF trajectory; drain current; fundamental S-parameters; harmonic S-parameters; large-signal model; noninvasive technique; nonlinear network analysis; voltage trajectory; waveform probing; FETs; Frequency measurement; Gallium arsenide; Noninvasive treatment; Nonlinear network analysis; Power measurement; Power system harmonics; Radio frequency; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.277126
Filename
277126
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