Comparative study of digital inverter for CNTFET & CMOS technologies

Author

Gupta, Rajesh ; Rana, Ashwani K.

Author_Institution

Nat. Inst. of Technol., Hamirpur, India

fYear

2013

Firstpage

1

Lastpage

5

Abstract

This paper presents a deeper insight into the present need of the Carbon Nano Tube Field Effect Transistor (CNTFET) by its comparison with conventional MOSFET for digital applications. Here, one-single walled-32nm long-tube CNTFET technology has been considered as base and compared with 45nm, 32nm & 22nm CMOS technologies by implementing a digital inverter. Various parameters in current & voltage analysis have been compared through HSPICE simulations which indicate higher performance of CNTFET over the CMOS technology and the limitations of latter upon scaling down to 22nm technology node. However, deeper examination reveals an issue of short-circuit current transients in case of CNTFET inverter that must be prevented at nano regime.

Keywords

CMOS integrated circuits; MOSFET; carbon nanotube field effect transistors; circuit analysis computing; invertors; short-circuit currents; CMOS technologies; CNTFET; HSPICE simulations; MOSFET; carbon nanotube field effect transistor; current analysis; digital inverter; short circuit current transients; size 22 nm; size 32 nm; size 45 nm; voltage analysis; CMOS integrated circuits; CMOS technology; CNTFETs; Carbon; Electron tubes; Inverters; Short-circuit currents; CMOS; CNTFET; Nanoelectronics; VLSI;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering (NUiCONE), 2013 Nirma University International Conference on

Conference_Location

Ahmedabad

Print_ISBN

978-1-4799-0726-7

Type

conf

DOI

10.1109/NUiCONE.2013.6780138

Filename

6780138